JPH0564407B2 - - Google Patents

Info

Publication number
JPH0564407B2
JPH0564407B2 JP60214627A JP21462785A JPH0564407B2 JP H0564407 B2 JPH0564407 B2 JP H0564407B2 JP 60214627 A JP60214627 A JP 60214627A JP 21462785 A JP21462785 A JP 21462785A JP H0564407 B2 JPH0564407 B2 JP H0564407B2
Authority
JP
Japan
Prior art keywords
plasma
generation chamber
ion
plasma generation
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60214627A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6276137A (ja
Inventor
Yasunori Oono
Tomoe Kurosawa
Tadashi Sato
Yukio Kurosawa
Yoshimi Hakamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60214627A priority Critical patent/JPS6276137A/ja
Priority to US06/911,790 priority patent/US4713585A/en
Priority to EP86113440A priority patent/EP0217361B1/en
Priority to DE3689349T priority patent/DE3689349T2/de
Publication of JPS6276137A publication Critical patent/JPS6276137A/ja
Publication of JPH0564407B2 publication Critical patent/JPH0564407B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
JP60214627A 1985-09-30 1985-09-30 イオン源 Granted JPS6276137A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60214627A JPS6276137A (ja) 1985-09-30 1985-09-30 イオン源
US06/911,790 US4713585A (en) 1985-09-30 1986-09-26 Ion source
EP86113440A EP0217361B1 (en) 1985-09-30 1986-09-30 Ion source
DE3689349T DE3689349T2 (de) 1985-09-30 1986-09-30 Ionenquelle.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60214627A JPS6276137A (ja) 1985-09-30 1985-09-30 イオン源

Publications (2)

Publication Number Publication Date
JPS6276137A JPS6276137A (ja) 1987-04-08
JPH0564407B2 true JPH0564407B2 (en]) 1993-09-14

Family

ID=16658865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60214627A Granted JPS6276137A (ja) 1985-09-30 1985-09-30 イオン源

Country Status (4)

Country Link
US (1) US4713585A (en])
EP (1) EP0217361B1 (en])
JP (1) JPS6276137A (en])
DE (1) DE3689349T2 (en])

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654644B2 (ja) * 1985-10-04 1994-07-20 株式会社日立製作所 イオン源
JPH0711072B2 (ja) * 1986-04-04 1995-02-08 株式会社日立製作所 イオン源装置
JP2582552B2 (ja) * 1986-05-29 1997-02-19 三菱電機株式会社 イオン注入装置
DE3810197A1 (de) * 1987-03-27 1988-10-13 Mitsubishi Electric Corp Plasma-bearbeitungseinrichtung
JPS63244619A (ja) * 1987-03-30 1988-10-12 Sumitomo Metal Ind Ltd プラズマ装置
US4973883A (en) * 1987-05-01 1990-11-27 Semiconductor Energy Laborator Co., Ltd. Plasma processing apparatus with a lisitano coil
US5059866A (en) * 1987-10-01 1991-10-22 Apricot S.A. Method and apparatus for cooling electrons, ions or plasma
JPH01132033A (ja) * 1987-11-17 1989-05-24 Hitachi Ltd イオン源及び薄膜形成装置
DE3803355A1 (de) * 1988-02-05 1989-08-17 Leybold Ag Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage
DE68926923T2 (de) * 1988-03-16 1996-12-19 Hitachi Ltd Mikrowellenionenquelle
US5115167A (en) * 1988-04-05 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Plasma processor
US5146138A (en) * 1988-04-05 1992-09-08 Mitsubishi Denki Kabushiki Kaisha Plasma processor
JP2618001B2 (ja) * 1988-07-13 1997-06-11 三菱電機株式会社 プラズマ反応装置
US5003178A (en) * 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
GB8905073D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
US5227695A (en) * 1989-06-05 1993-07-13 Centre National De La Recherche Scientifique Device for coupling microwave energy with an exciter and for distributing it therealong for the purpose of producing a plasma
US5841236A (en) * 1989-10-02 1998-11-24 The Regents Of The University Of California Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication
US5032202A (en) * 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
US5081398A (en) * 1989-10-20 1992-01-14 Board Of Trustees Operating Michigan State University Resonant radio frequency wave coupler apparatus using higher modes
US5208512A (en) * 1990-10-16 1993-05-04 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
US5190703A (en) * 1990-12-24 1993-03-02 Himont, Incorporated Plasma reactor chamber
FR2671931A1 (fr) * 1991-01-22 1992-07-24 Metal Process Dispositif de repartition d'une energie micro-onde pour l'excitation d'un plasma.
IT1246684B (it) * 1991-03-07 1994-11-24 Proel Tecnologie Spa Propulsore ionico a risonanza ciclotronica.
US5189446A (en) * 1991-05-17 1993-02-23 International Business Machines Corporation Plasma wafer processing tool having closed electron cyclotron resonance
ES2078735T3 (es) * 1991-05-21 1995-12-16 Materials Research Corp Modulo de grabado suave mediante util de agrupacion y generador de plasma ecr para el mismo.
US5306985A (en) * 1992-07-17 1994-04-26 Sematech, Inc. ECR apparatus with magnetic coil for plasma refractive index control
DE4403125A1 (de) * 1994-02-02 1995-08-03 Fraunhofer Ges Forschung Vorrichtung zur Plasmaerzeugung
CN1076863C (zh) * 1994-06-10 2001-12-26 松下电器产业株式会社 半导体元件的制造设备及制造方法
IT1269413B (it) * 1994-10-21 1997-04-01 Proel Tecnologie Spa Sorgente di plasma a radiofrequenza
GB2311164A (en) * 1996-03-13 1997-09-17 Atomic Energy Authority Uk Large area plasma generator
US6356188B1 (en) 2000-09-25 2002-03-12 Ford Global Technologies, Inc. Wheel lift identification for an automotive vehicle
US8158016B2 (en) * 2004-02-04 2012-04-17 Veeco Instruments, Inc. Methods of operating an electromagnet of an ion source
DE102007051444B4 (de) * 2007-10-25 2012-11-08 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum Trockenätzen von kontinuierlich bewegten Materialien
KR20110032679A (ko) * 2009-09-23 2011-03-30 현대자동차주식회사 광택특성이 향상된 플라스틱 및 플라스틱 표면의 광택 처리 방법
KR101134480B1 (ko) * 2009-09-28 2012-04-13 현대자동차주식회사 나노 엠보 패턴 표면을 갖는 플라스틱 및 이의 제조 방법
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US8692468B2 (en) * 2011-10-03 2014-04-08 Varian Semiconductor Equipment Associates, Inc. Transformer-coupled RF source for plasma processing tool
DE102013225608A1 (de) * 2013-12-11 2015-06-11 Apo Gmbh Massenkleinteilbeschichtung Vorrichtung und Verfahren zur Oberflächenbehandlung von Kleinteilen mittels Plasma

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3230418A (en) * 1961-06-23 1966-01-18 Raphael A Dandl Device having high-gradient magnetic cusp geometry
JPS5947421B2 (ja) * 1980-03-24 1984-11-19 株式会社日立製作所 マイクロ波イオン源
FR2550681B1 (fr) * 1983-08-12 1985-12-06 Centre Nat Rech Scient Source d'ions a au moins deux chambres d'ionisation, en particulier pour la formation de faisceaux d'ions chimiquement reactifs
FR2556498B1 (fr) * 1983-12-07 1986-09-05 Commissariat Energie Atomique Source d'ions multicharges a plusieurs zones de resonance cyclotronique electronique
US4647818A (en) * 1984-04-16 1987-03-03 Sfe Technologies Nonthermionic hollow anode gas discharge electron beam source
JPH0740468B2 (ja) * 1984-12-11 1995-05-01 株式会社日立製作所 高周波プラズマ発生装置
US4652795A (en) * 1985-03-14 1987-03-24 Denton Vacuum Inc. External plasma gun

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT.=1984 *
PHYSICS LETTERS=1984 *
REV.SCI.INSTRUM.50(5)=1979 *
REV.SCI.INSTRUM.56(2)=1985 *

Also Published As

Publication number Publication date
EP0217361A2 (en) 1987-04-08
DE3689349T2 (de) 1994-05-19
JPS6276137A (ja) 1987-04-08
EP0217361A3 (en) 1988-08-03
DE3689349D1 (de) 1994-01-13
EP0217361B1 (en) 1993-12-01
US4713585A (en) 1987-12-15

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